Permutational memory cells

ABSTRACT

Various embodiments comprise apparatuses having at least two resistance change memory (RCM) cells. In one embodiment, an apparatus includes at least two electrical contacts coupled to each of the RCM cells. A memory cell material is disposed between pairs of each of the electrical contacts coupled to each of the RCM cells. The memory cell material is capable of forming a conductive pathway between the electrical contacts with at least a portion of the memory cell material arranged to cross-couple a conductive pathway between select ones of the at least two electrical contacts electrically coupled to each of the at least two RCM cells. Additional apparatuses and methods are described.

BACKGROUND

Computers and other electronic systems, for example, digitaltelevisions, digital cameras, and cellular phones, often have one ormore memory devices to store information. Increasingly, memory devicesare being reduced in size to achieve a higher density of storagecapacity. Even when increased density is achieved, consumers oftendemand that memory devices also use less power while maintaining highspeed access.

For a resistance change memory (RCM) cell that operates using discreteconductive pathways (CPs), such as filaments or filamentary connectorsformed between electrical contacts of an RCM cell, multiple pathwaysbetween multiple electrical contacts are, in principle, possible. Thedisclosed subject matter provides a mechanism for power-law increasedstorage density in an RCM cell or other type of filament-based memorycell (e.g., resistive random-access memory (RRAM) cell) by making use ofvarious combinations and permutations of multiple conductive pathwayswithin a cell that has more than two electrical contacts (ECs).

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of a memory device having a memory array withmemory cells, according to an embodiment;

FIG. 2 is a partial block diagram of a memory device having a memoryarray including memory cells with access components and memory elements,according to an embodiment;

FIG. 3 is a schematic diagram of a memory cell having an accesscomponent coupled to a memory element, according to various embodiments;

FIG. 4 is a simplified schematic block diagram of one of several typesof resistance change memory (RCM) cells that may be used with the memorydevices of FIGS. 1 and 2 or used to form the memory cell of FIG. 3;

FIG. 5 illustrates a number of combinations and permutations associatedwith a memory cell with two electrical contacts, according to anembodiment;

FIG. 6 illustrates a number of combinations and permutations forconductive pathways in a memory cell with four electrical contacts,according to an embodiment;

FIG. 7 illustrates a number of combinations and permutations forconductive pathways in a memory cell with six electrical contacts,according to an embodiment;

FIG. 8 is a plan-view indicating the number of combinations andpermutations for conductive pathways in a memory cell with sevenelectrical contacts in a hexagonal close-packed array, according to anembodiment;

FIG. 9 is a plan-view indicating the number of combinations andpermutations for conductive pathways in a memory cell with fourelectrical contacts in a square array, according to an embodiment; and

FIG. 10 is a block diagram of a system embodiment, including a memorydevice.

DETAILED DESCRIPTION

The description that follows includes illustrative apparatuses(circuitry, devices, structures, systems, and the like) and methods(e.g., processes, protocols, sequences, techniques, and technologies)that embody the subject matter. In the following description, forpurposes of explanation, numerous specific details are set forth inorder to provide an understanding of various embodiments of theinventive subject matter. After reading this disclosure, it will beevident to those of ordinary skill in the art however, that variousembodiments of the subject matter may be practiced without thesespecific details. Further, well-known apparatuses and methods have notbeen shown in detail so as not to obscure the description of variousembodiments.

For a resistance change memory (RCM) cell that operates using discreteconductive pathways (CPs), such as filaments or filamentary connectorsformed between electrical contacts of an RCM cell, multiple pathwaysbetween multiple electrical contacts are, in principle, possible. Thedisclosed subject matter provides a mechanism for power-law increasedstorage density in an RCM cell or other type of filament-based memorycell (e.g., resistive random-access memory (RRAM) cell) by making use ofvarious combinations and permutations of multiple conductive pathwayswithin a cell that has more than two electrical contacts (ECs).

Referring now to FIG. 1, a block diagram of an apparatus in the form ofa memory device 101 is shown. The memory device 101 includes one or morememory arrays 102 having a number (e.g., one or more) of memory cells100 according to an embodiment. The memory cells 100 can be arranged inrows and columns along with access lines 104 (e.g., wordlines to conductsignals WL0 through WLm) and first data lines 106 (e.g., bit lines toconduct signals BL0 through BLn). The memory device 101 can use theaccess lines 104 and the first data lines 106 to transfer information toand from the memory cells 100. A row decoder 107 and a column decoder108 decode address signals A0 through AX on address lines 109 todetermine which ones of the memory cells 100 are to be accessed.

Sense circuitry, such as a sense amplifier circuit 110, operates todetermine the values of information read from the memory cells 100 inthe form of signals on the first data lines 106. The sense amplifiercircuit 110 can also use the signals on the first data lines 106 todetermine the values of information to be written to the memory cells100.

The memory device 101 is further shown to include circuitry 112 totransfer values of information between the memory array 102 andinput/output (I/O) lines 105. Signals DQ0 through DQN on the I/O lines105 can represent values of information read from or to be written intothe memory cells 100. The I/O lines 105 can include nodes of the memorydevice 101 (e.g., pins, solder balls, or other interconnect technologiessuch as controlled collapse chip connection (C4), or flip chip attach(FCA)) on a package where the memory device 101 resides. Other devicesexternal to the memory device 101 (e.g., a memory controller or aprocessor, not shown in FIG. 1) can communicate with the memory device101 through the I/O lines 105, the address lines 109, or the controllines 120.

The memory device 101 can perform memory operations, such as a readoperation, to read values of information from selected ones of thememory cells 100 and a programming operation (also referred to as awrite operation) to program (e.g., to write) information into selectedones of the memory cells 100. The memory device 101 can also perform amemory erase operation to clear information from some or all of thememory cells 100.

A memory control unit 118 controls memory operations using signals onthe control lines 120. Examples of the signals on the control lines 120can include one or more clock signals and other signals to indicatewhich operation (e.g., a programming operation or read operation) thememory device 101 can or should perform. Other devices external to thememory device 101 (e.g., a processor or a memory controller) can controlthe values of the control signals on the control lines 120. Specificcombinations of values of the signals on the control lines 120 canproduce a command (e.g., a programming, read, or erase command) that cancause the memory device 101 to perform a corresponding memory operation(e.g., a program, read, or erase operation).

Although various embodiments discussed herein use examples relating to asingle-bit memory storage concept for ease in understanding, theinventive subject matter can be applied to numerous multiple-bit schemesas well. For example, each of the memory cells 100 can be programmed toa different one of at least two data states to represent, for example, avalue of a fractional bit, the value of a single bit or the value ofmultiple bits such as two, three, four, or a higher number of bits.

For example, each of the memory cells 100 can be programmed to one oftwo data states to represent a binary value of “0” or “1” in a singlebit. Such a cell is sometimes called a single-level cell (SLC).

In another example, each of the memory cells 100 can be programmed toone of more than two data states to represent a value of, for example,multiple bits, such as one of four possible values “00,” “01,” “10,” and“11” for two bits, one of eight possible values “000,” “001,” “010,”“011,” “100,” “101,” “110,” and “111” for three bits, or one of anotherset of values for larger numbers of multiple bits. A cell that can beprogrammed to one of more than two data states is sometimes referred toas a multi-level cell (MLC). Various operations on these types of cellsare discussed in more detail, below.

The memory device 101 can receive a supply voltage, including supplyvoltage signals V_(cc) and V_(ss), on a first supply line 130 and asecond supply line 132, respectively. Supply voltage signal V_(ss) can,for example, be at a ground potential (e.g., having a value ofapproximately zero volts). Supply voltage signal V_(cc) can include anexternal voltage supplied to the memory device 101 from an externalpower source such as a battery or alternating-current to direct-current(AC-DC) converter circuitry (not shown in FIG. 1).

The circuitry 112 of the memory device 101 is further shown to include aselect circuit 115 and an input/output (I/O) circuit 116. The selectcircuit 115 can respond to signals SEL1 through SELn to select signalson the first data lines 106 and the second data lines 113 that canrepresent the values of information to be read from or to be programmedinto the memory cells 100. The column decoder 108 can selectivelyactivate the SEL1 through SELn signals based on the A0 through AXaddress signals present on the address lines 109. The select circuit 115can select the signals on the first data lines 106 and the second datalines 113 to provide communication between the memory array 102 and theI/O circuit 116 during read and programming operations.

The memory device 101 may comprise a non-volatile memory device, and thememory cells 100 can include non-volatile memory cells, such that thememory cells 100 can retain information stored therein when power (e.g.,V_(cc), or V_(ss), or both) is disconnected from the memory device 101.

Each of the memory cells 100 can include a memory element havingmaterial, at least a portion of which can be programmed to a desireddata state (e.g., by being programmed to a corresponding resistancestate). Different data states can thus represent different values ofinformation programmed into each of the memory cells 100.

The memory device 101 can perform a programming operation when itreceives (e.g., from an external processor or a memory controller) aprogramming command and a value of information to be programmed into oneor more selected ones of the memory cells 100. Based on the value of theinformation, the memory device 101 can program the selected memory cellsto appropriate data states to represent the values of the information tobe stored therein.

One of ordinary skill in the art may recognize that the memory device101 may include other components, at least some of which are discussedherein. However, several of these components are not shown in thefigure, so as not to obscure details of the various embodimentsdescribed. The memory device 101 may include devices and memory cells,and operate using memory operations (e.g., programming and eraseoperations) similar to or identical to those described below withreference to various other figures and embodiments discussed herein.

With reference now to FIG. 2, a partial block diagram of an apparatus inthe form of a memory device 201 is shown to include a memory array 202,including memory cells 200 with access components 211 and memoryelements 222, according to an example embodiment. The memory array 202may be similar to or identical to the memory array 102 of FIG. 1. Asfurther shown in FIG. 2, the memory cells 200 are shown to be arrangedin a number of rows 230, 231, 232, along with access lines, for exampleword lines, to conduct signals to the cells 200, such as signals WL0,WL1, and WL2. The memory cells are also shown to be arranged in a numberof columns 240, 241, 242 along with data lines, for example bit lines,to conduct signals to the cells 200, such as signals BL0, BL1, and BL2.The access components 211 can turn on (e.g., by using appropriate valuesof signals WL0, WL1, and WL2) to allow access to the memory elements222, such as to operate the memory elements 222 as pass elements, or toread information from or program (e.g., write) information into thememory elements 222.

Programming information into the memory elements 222 can include causingthe memory elements 222 to have specific resistance states. Thus,reading information from a memory cell 200 can include, for example,determining a resistance state of the memory element 222 in response toa specific voltage being applied to its access component 211. The act ofdetermining resistance may involve sensing a current (or the absence ofcurrent) flowing through the memory cell 200 (e.g., by sensing a currentof a bit line electrically coupled to the memory cell). Based on ameasured value of the current (including, in some examples, whether acurrent is detected at all), a corresponding value of the informationstored in the memory can be determined. The value of information storedin a memory cell 200 can be determined in still other ways, such as bysensing a voltage of a bit line electrically coupled to the memory cell.

FIG. 3 is a schematic diagram of a memory cell 300 having an accesscomponent 311 coupled to a memory element 333, according to variousembodiments. Lines labeled WL and BL in FIG. 3 may correspond to any oneof the access lines 104 and any one of the first data lines 106 of FIG.1, respectively. FIG. 3 shows an example of the access component 311including, for example, a metal-oxide-semiconductor field-effecttransistor (MOSFET). As will be realized by a person of ordinary skillin the art, upon reading this disclosure, the memory cell 300 caninclude other types of access components, such as diodes, for example,or may not include any access component, as is the case with somecross-point array embodiments.

The memory element 333 may be coupled to and disposed between twoelectrodes, such as a first electrode 351 and a second electrode 352.FIG. 3 schematically shows these electrodes as dots. Structurally, eachof these electrodes can include conductive material. The memory element333 can include material that can be changed, for example, in responseto a signal, to have a different resistance state. The value ofinformation stored in the memory element 333 can correspond to theresistance state of the memory element 333. The access component 311 canenable signals (e.g., embodied as a voltage or current) to betransferred to and from the memory element 333 via the pairs ofelectrodes 351, 352 during operation of the memory cell 300, such asduring read, program, or erase operations.

A programming operation may use signal WL to turn on the accesscomponent 311 and then apply a signal BL (e.g., a signal having aprogramming voltage or current) through the memory element 333. Such asignal can cause at least a portion of the material of the memoryelement 333 to change its resistance state. The change can be reversedby, for instance, performing an erase operation. For example, alocalized conductive region may be formed within an electrolytecontained within the memory element 333. The formation of the localizedconductive region is discussed in more detail, below, for example, withreference to FIG. 4. The lateral size of the localized conductive regioncan determine the resistance state of the memory cell 300, wheredifferent resistance states correspond to different data states thatrepresent different values of information stored in the memory element333.

A read operation may use the signal WL to turn on the access component311 (or otherwise access the memory cell 300) and then apply a signal BLhaving a voltage across or a current (e.g., a read voltage or current)through the memory element 333. The read operation may measure theresistance of the memory cell 300, based on a read voltage or current,to determine the corresponding value of information stored therein. Forexample, in the memory cell 300, a different resistance state can imparta different value (e.g., voltage or current value) to signal BL when aread current passes through the memory elements 333. Other circuitry ofthe memory device (e.g., a circuit such as the I/O circuit 116 ofFIG. 1) can use the signal BL to measure the resistance state of memoryelement 333 to determine the value of the information stored therein.

The voltage or current used during a read, program, or erase operationcan be different from one another. For example, in a programmingoperation, the value (e.g., the voltage) of the signal (e.g., the signalBL in FIG. 3) that creates a current flowing through the memory element333 can be sufficient to cause the material state or at least a portionof the memory element to change. The change can alter the resistancestate of the memory element to reflect the value of the information tobe stored in the memory element 333.

In a read operation, the value (e.g., the voltage) of the signal (e.g.,the signal BL in FIG. 3) that creates a current flowing through thememory element 333 can be sufficient to create the current butinsufficient to cause any portion of the memory element to change.Consequently, the value of the information stored in the memory elementcan remain unchanged during and after the read operation.

In an erase operation, the voltage value of the signal (e.g., the signalBL in FIG. 3) can have an opposite polarity from the voltage used in aprogramming operation. The signal, creating a current in this case, cantherefore change, or reset, the material state of the memory element toits original state; for example, a state prior to any programming beingperformed on the memory cell.

Various ones or all of the memory cells 100, 200, 300 of FIGS. 1 through3 can include a memory cell having a structure similar or identical toone or more of the memory cells described below.

For example, FIG. 4 is a simplified schematic block diagram of one ofseveral memory cells that may be used with the memory devices of FIGS. 1and 2, and may be similar or identical to the memory element 333 of FIG.3. That is, the memory cell 300 may comprise a resistance change memory(RCM) cell 400. The RCM cell 400 may include a memory cell in which thechange in cell resistance, and hence a memory state, is based on theformation, or removal, of a localized conductive region between thememory cell electrodes. In some RCM technologies, the localizedconductive region is sometimes referred to as a conductive filament. Insome embodiments, the RCM includes types of resistive random accessmemory (RRAM), in which the localized conductive region is formed in anoxide or chalcogenide-based memory cell material. In one embodiment, theRRAM cell is a conductive-bridging RAM (CBRAM) memory cell. In thiscase, operation of the RCM cell 400 is based on a voltage-driven ionicmigration and electrochemical deposition of metal ions within a memorycell material 409 of the RCM cell 400. In another embodiment, the RRAMcell is based on forming and erasing a localized conductive region byelectric-field driven drift of oxygen anions, or oxygen vacancies,within a transition metal oxide memory cell material.

Prior to any signal (e.g., a bias voltage) being applied to an anode 405and a cathode 407 of the RCM cell 400, the basic construction of the RCMcell 400 is that of a metal-insulator-metal structure. In someembodiments, each RCM cell is constructed in series with a non-ohmicaccess device, for example, a diode, to control parasitic currentpathways through unselected memory cells within a memory cell array.Prior to any voltage being applied to the anode 405, the RCM cell 400can be considered to be in a “reset” (e.g., native) state. The resetstate is a relatively high-resistance state due to the naturalinsulative (i.e., electrically non-conductive) nature of the memory cellmaterial 409. By applying, for example, a positive voltage to an anode405 of the RCM cell 400, metal ions are driven from the anode 405,through the memory cell material 409, and towards the cathode 407.

The anode 405 may be, for example, an oxidizable, fast-diffusingmetallic or metallic alloy layer. The anode 405 may be comprised ofvarious types of electrochemically active metals or metal alloys. In aspecific example, the anode 405 may comprise silver (Ag), copper (Cu),Aluminum (Al), or zinc (Zn) and functions as a metallic ion donor. Thecathode 407 may be a relatively inert material comprising asemiconducting or metallic material that does not possess a significantsolubility or a significant mobility to provide ions to the memory cellmaterial 409.

In a specific example, the cathode 407 may comprise platinum (Pt),tungsten (W), titanium (Ti), tantalum (Ta), titanium nitride (TiN),doped silicon (Si), tantalum nitride (TaN), or ruthenium (Ru). Thememory cell material 409 may be a chalcogenide, for example,silver-doped germanium selenide (Ag—GeSe), silver-doped germaniumsulfide (Ag—GeS₂), copper-doped germanium sulfide (Cu—GeS₂), or coppertelluride (CuTe_(x)); or an oxide, e.g. a transition metal oxide (e.g.,ZrO_(x)), a semiconductor oxide (e.g., SiO_(x)), a rare earth oxide(e.g., YbO_(x)), another metal oxide (e.g., AlO_(x)), or combinationsthereof, (e.g., ZrSiO_(x)).

One advantage of the RCM cell 400 compared with more traditional memorytechnologies (e.g., flash memory) is that the RCM cell 400 offers thepotential of scaling to smaller technology nodes, and may be operated atcomparatively low power for all operations (e.g., read, program, anderase). Also, these operations may be performed at a higher speed thantraditional memory.

Referring now to FIG. 5, the number of combinations and permutations fora memory cell 500 with two electrical contacts is illustrated. A firstelectrical contact 501 (EC1) and a second electrical contact 503 (EC2)are separated by, for example, a memory cell material 505. A conductivepathway 507 is shown extending from the first electrical contact 501 tothe second electrical contact 503. Assuming a simple binary on/offarrangement of the memory cell 500, the conductive pathway 507 providesthe only electrical coupling possible between the first electricalcontact 501 and the second electrical contact 503.

As discussed briefly above, for an RCM cell that operates based ondiscrete CPs, multiple pathways between multiple electrical contactsare, in principle, possible. Any filament-based RCM cell technology withgreater than two electrode contacts per cell can be considered.

The number of permutations for information storage increases in anapproximately power-law relationship with the number of electrodecontacts per cell, while the number of combinations (and program/eraseand read operations) increases only approximately linearly. For a givennumber of electrical contacts, N_(EC), on memory cells in theillustrated configuration, the maximum number of conductive pathways,N_(CP), may be determined by equation (1):

$\begin{matrix}{N_{CP} = {\left\lbrack {\frac{3}{2}\left( {N_{EC} - 2} \right)} \right\rbrack + 1}} & (1)\end{matrix}$

The maximum number of on/off permutations, N_(PERM), is providedaccording to the power-law relationship expressed by equation (2):N_(PERM)=2^(N) ^(CP)   (2)

The number of permutations determined by equation (2) relates to asequence, or order, of the on/off settings between various possibleconductive pathway arrangements. The concept of permutations isdiscussed in more detail, below, with reference to Table III.

Equation (1) applies for an even number of electrical contacts. Oddnumbers of electrical contacts or different geometries and arrangementsof the electrical contacts may result in slightly different numbers ofCPs, but the maximum number of CPs are still qualitatively similar tothe results given by the conductive pathway equation (1) above, as willbe explained in more detail below.

In the simple example of FIG. 5, where only two electrical contacts arepresent, the number of electrical contacts in the memory cell 500 istwo, designated as contacts EC1 and EC2. Therefore, for two electricalcontacts, the maximum number of conductive pathways is one—theconductive pathway 507 between EC1 and EC2. The number of possiblepermutations or ways of connecting EC1 to EC2 that are possible is alsoone. These possible combinations and permutations for the memory cell500 of FIG. 5 are summarized in Table I, below.

TABLE I Power-Law Increased Permutations of an RCM Cell Number ofElectrical Contacts, N_(EC) 2 Number of Conductive Pathways, N_(CP) 1Number of Possible Permutations, N_(PERM) 1

Therefore, the maximum number of conductive pathways and maximum numberof possible permutations is only one for two electrical contacts.

However, referring now to FIG. 6, the number of combinations andpermutations for conductive pathways in a memory cell 600 with fourelectrical contacts is illustrated. The memory cell 600 includes fourelectrical contacts 601 (EC1, EC2, EC3, and EC4) and, for this example,can be considered to have two memory states (“on” or “off”). The memorycell 600 has a first conductive pathway 611 electrically couplingcontacts EC1 and EC2, a second conductive pathway 613 electricallycoupling contacts EC2 and EC3, a third conductive pathway 615electrically coupling contacts EC1 and EC4, and a fourth conductivepathway 617 electrically coupling contacts EC3 and EC4. The secondconductive pathway 613 electrically coupling contacts EC2 and EC3 andthe third conductive pathway 615 electrically coupling contacts EC1 andEC4 may be considered to be cross-coupled conductive pathways. Note theside-view illustration of FIG. 6 does not show the three-dimensionalaspect of the conductive pathway (CP) configuration. The geometriclayout of the electrical contacts (EC) separates second conductivepathway 613 and the third conductive pathway 615, so that they are notphysically overlapping, which could electrically short the two CPs.

An electrolyte 609 may allow growth or formation of any of the filamentsor conductive pathways as discussed above with reference to FIG. 4. Asshown in FIG. 6, the electrolyte 609 is formed continuously (e.g., acontinuous electrolyte) between each of the four electrical contacts601. However, in other embodiments the electrolyte 609 may not form asingle continuous strand, but instead comprises a continuous portion ofthe electrolyte 609 that bridges each of the four electrical contacts601 in some manner.

Applying the conductive pathway and power-law permutationalrelationships to the memory cell 600 of FIG. 6, for the four electricalcontacts 601, the maximum number of conductive pathways is found to befour. The maximum number of possible permutations or ways of connectingthe four electrical contacts 601 is 16. These possible combinations andpermutations for the memory cell 600 of FIG. 6 are summarized in TableII, below.

TABLE II Power-Law Increased Permutations of an RCM Cell Number ofElectrical Contacts, N_(EC) 4 Number of Conductive Pathways, N_(CP) 4Number of Possible Permutations, N_(PERM) 16

Therefore, the maximum number of conductive pathways for the memory cell600 of FIG. 6, with the four electrical contacts 601, is four and themaximum number of possible permutations is sixteen. Table III, below,provides an indication of the number of combinations and the number ofpermutations depending on an on/off configuration state of the variouscombinations on electrical contacts having an “on” state conductivepathway between them.

TABLE III ON/OFF Configuration of All Conductive Pathways No. of No. ofCP-1 CP-2 CP-3 CP-4 Combinations Permutations (EC1- (EC2- (EC1- (EC3-(Sum of All CP (Sequence of EC2) EC3) EC4) EC4) States) All CP States) 00 0 0 0 1 0 0 0 1 1 2 0 0 1 0 1 3 0 1 0 0 1 4 1 0 0 0 1 5 0 0 1 1 2 6 01 0 1 2 7 1 0 0 1 2 8 0 1 1 0 2 9 1 0 1 0 2 10 1 1 0 0 2 11 0 1 1 1 3 121 0 1 1 3 13 1 1 0 1 3 14 1 1 1 0 3 15 1 1 1 1 4 16

As discussed briefly above, the number of permutations relates to asequence, or order, of, for example, reading the on/off settings betweenvarious possible conductive pathway arrangements. Therefore, as thenumber of on/off configuration of all conductive pathways varies fromall “off” (0, 0, 0, 0), at the top of Table III, to all “on” (1, 1,1, 1) at the bottom of Table III, the number of permutations, orsequences in which the conductive pathways can be turned on orprogrammed, erased, or read, increase by one for each new “on” state.Consequently, pairs of electrical contacts electrically coupled to RCMcells are configured to be accessed individually for program, erase, orread operations regardless of whether the pairs of electrical contactsare disposed directly opposite each other or cross-coupled as shown in,for example, FIG. 6 and FIG. 7. For example, consider a situation whereonly CPs CP-3 and CP-4 are either “on” or “off.” In this example, thereare only two combinations: (1) contacts EC1 to EC4; and (2) contacts EC3to EC4. However, there are three permutations: (1) CPs CP-3 “off” andCP-4 “off”; (2) CPs CP-3 “off” and CP-4 “on”; and (3) CPs CP-3 “on” andCP-4 “on.” Therefore, there are four different ways to store a “1.”These permutations can be visualized more readily with reference to rows1 through 3 of the on/off sequence in Table III.

Note that the Tables and equations (1) and (2) provided above relateonly to an on-off state. This binary simplification of the subjectmatter is provided merely for clarity in understanding and is notintended as a limitation. When considering multi-level cells (MLC), bothcombinations and permutations of multiple conductive pathways can beconsidered within a cell that has more than two electrical contacts(EC). For example, in MLC applications, if each conductive pathway hasthree states (e.g., high, medium, and low resistance states), thenequation (3) applies for a three-state MLC device with four conductivepathways:N_(PERM)=3^(N) ^(CP)   (3)

Consequently, for three states and four conductive pathways,N_(PERM)=3⁴. Thus, N_(PERM)=81. In general, for an arbitrary number ofmemory states, N_(S), equation (4) applies, where:N_(PERM)=N_(S) ^(N) ^(CP)   (4)

Thus, applying equation (4) for a four-state MLC with four conductivepathways, N_(PERM)=4⁴ or N_(PERM)=256; for a five-state MLC, N_(PERM)=5⁴or N_(PERM)=625; and so on. Therefore, a person of ordinary skill in theart, upon reading and understanding the disclosure provided herein, willappreciate the large increase in storage density that is possible byapplying the permutational methods described. Further, while the numberof permutations for information storage increases in a power-lawrelationship with the number of electrode contacts per cell, the numberof combinations (and respective program/erase and read operations)increases only linearly.

As another example, FIG. 7 illustrates the number of combinations andpermutations for conductive pathways in a memory cell 700 with sixelectrical contacts 701 (EC1, EC2, . . . , EC6). The memory cell 700,for this example, can be considered to have two memory states (“on” or“off”).

The memory cell 700 has a first conductive pathway 715 electricallycoupling contacts EC1 and EC2, a second conductive pathway 717electrically coupling contacts EC1 and EC4, a third conductive pathway719 electrically coupling contacts EC2 and EC3, a fourth conductivepathway 721 electrically coupling contacts EC3 and EC4, a fifthconductive pathway 723 electrically coupling contacts EC3 and EC6, asixth conductive pathway 725 electrically coupling contacts EC4 and EC5,and a seventh conductive pathway 727 electrically coupling contacts EC5and EC6.

A memory cell material 713 may allow growth or formation of any of theconductive pathways as discussed above with reference to FIG. 4. Asshown in FIG. 7, the memory cell material 713 is formed continuouslybetween each of the six electrical contacts 701. However, in otherembodiments the memory cell material 713 may not form a singlecontinuous strand, but instead may comprise a continuous portion of thememory cell material 713 that bridges each of the six electricalcontacts 701 in some manner.

Applying the conductive pathway and power-law permutationalrelationships, equations (1) and (2) respectively, to the memory cell700 of FIG. 7, for six electrical contacts, the maximum number ofconductive pathways is found to be seven. The maximum number of possiblepermutations or ways of connecting the six electrical contacts 701 is128. These possible combinations and permutations for the memory cell700 of FIG. 7 are summarized in Table IV, below.

TABLE IV Power-Law Increased Permutations of an RCM Cell Number ofElectrical Contacts, N_(EC) 6 Number of Conductive Pathways, N_(CP) 7Number of Possible Permutations, N_(PERM) 128

Therefore, the maximum number of conductive pathways for the memory cell700 of FIG. 7, with the six electrical contacts 701, is seven and themaximum number of possible permutations is 128.

Notice that in FIG. 7, an assumption is made that end bits of the memorycell 700 cannot be coupled. For example, no conductive pathways from EC6back to contacts EC1 or EC5 back to contact EC2 are shown. However, sucharrangements are possible, and can be envisioned by a person of ordinaryskill in the art after reading this disclosure. Further, otherarrangements, discussed with reference to FIG. 8 and FIG. 9, may also bepossible. For example, other electrode contact configurations mayinclude a hexagonal close-packed (HCP) array or a cubic array of viacontacts within a matrix of one or more cell materials.

In general, the number of permutations for information storage increasesin a power-law relationship with the number of electrical contacts percell. The number of combinations, and, consequently, the number ofprogram/erase and read operations increases only linearly. Table Vindicates both the power-law relationship, for N_(PERM), and the linearrelationship, for N_(CP), using example numbers of electrical contacts,N_(EC), in a two-state memory cell.

TABLE V N_(EC) N_(CP) N_(PERM) 2 1 2 4 4 16 6 7 128 8 10 1,024 10 138,192 12 16 65,536 14 19 524,288 16 22 4,194,304 18 25 33,554,432 20 28268,435,456

As another example, FIG. 8 is a plan-view drawing indicating the numberof combinations and permutations for conductive pathways in a memorycell 800 with seven electrical contacts 801 (EC1, EC2, . . . , EC7) andtwo memory states (“on” or “off”). The seven electrical contacts 801 arearranged in a hexagonal close-packed (HCP) arrangement betweenindividual ones of the memory cells arranged lateral to each other. TheHCP arrangement of the memory cell 800 may comprise a subset of a larger2√3 f² memory cell array. The memory cell 800 has a first conductivepathway 821 electrically coupling contacts EC1 and EC7, a secondconductive pathway 823 electrically coupling contacts EC2 and EC7, athird conductive pathway 825 electrically coupling contacts EC3 and EC7,a fourth conductive pathway 827 electrically coupling contacts EC4 andEC7, a fifth conductive pathway 829 electrically coupling contacts EC5and EC7, and a sixth conductive pathway 831 electrically couplingcontacts EC6 and EC7.

A memory cell material 815 may allow formation of any of the conductivepathways as discussed above with reference to FIG. 4. Although thememory cell material 815 is shown as a circular arrangement surroundingeach electrical contact in the plan-view drawing of FIG. 8, the memorycell material 815 may take on any shape, such as square, rectangular,hexagonal, or even an irregular form, such as a continuous form fillingvoids between the seven electrical contacts 801 to bridge each of theadjacent ones of the seven electrical contacts 801. For example, asshown, the memory cell material 815 between the first electrical contactEC1 and the seventh electrical contact EC7 meet to form a conductivepathway to form between the seven electrical contacts 801. In otherembodiments, the memory cell material 815 may be continuous across theentire construction of the memory cell 800.

As noted earlier, the conductive pathway equation (1) is onlyapproximate for a non-even number of electrical contacts in theconfigurations illustrated in, for example, FIGS. 5 through 7. For anodd-number of electrical contacts, such as the seven electrical contacts801 described with reference to FIG. 8, the seventh contact, EC7, isshared with the other contacts, EC1 through EC6. Therefore, theconductive pathway equation (1) is only an approximation and will varyslightly depending upon an exact geometrical arrangement of theelectrical contacts. However, once the number of electrical contacts isdetermined, the power-law permutational relationship, equation (2), isstill applicable to the memory cell 800 of FIG. 8. For the sevenelectrical contacts with the six conductive pathways, the maximum numberof possible permutations or ways of connecting the seven electricalcontacts 801 is 64. These possible combinations and permutations for thememory cell 800 of FIG. 8 are summarized in Table VI, below.

TABLE VI Power-Law Increased Permutations of an RCM Cell Number ofElectrical Contacts, N_(EC) 7 Number of Conductive Pathways, N_(CP) 6Number of Possible Permutations, N_(PERM) 64

With reference now to FIG. 9 a plan-view indicates the number ofcombinations and permutations for conductive pathways in theconstruction of a memory cell 900 with four electrical contacts 901 in asquare array; individual ones of the memory cells arranged lateral toeach other. The memory cell 900 may be a subset of a larger 4f² memorycell array. The memory cell 900 has the four electrical contacts 901(EC1, EC2, EC3, and EC4) and, for this example, can be considered tohave two memory states (“on” or “off”). The memory cell 900 has a firstconductive pathway 929 electrically coupling contacts EC1 and EC2, asecond conductive pathway 931 electrically coupling contacts EC1 andEC4, a third conductive pathway 921 electrically coupling contacts EC1and EC3, a fourth conductive pathway 927 electrically coupling contactsEC3 and EC2, a fifth conductive pathway 923 electrically couplingcontacts EC3 and EC4, and a sixth conductive pathway 925 electricallycoupling contacts EC4 and EC2.

Either or both of the cross-coupled conductive pathways, for example,the second conductive pathway 931 electrically coupling contacts EC1 andEC4, and the fourth conductive pathway 927 electrically couplingcontacts EC3 and EC2, may be considered as optional conductive pathways.That is, depending upon a particular memory device, one or both of theseconductive pathways may not be employed in a given configuration.Therefore, for the memory cell 900 of FIG. 9, there may be four, five,or six conductive pathways depending on whether a designer chooses toinclude one or both of the two optional cross-coupled conductivepathways. In some embodiments, all conductive pathways may not be usedsuch as, for example, to avoid interference if the localized conductiveregions cannot be sufficiently isolated when crossing the middle space.

A memory cell material 909 may allow the formation of any of theconductive pathways as discussed above with reference to FIG. 4. As withthe memory cell material 815 discussed with reference to FIG. 8, thememory cell material 909 of FIG. 9 may take on any shape, such assquare, rectangular, hexagonal, or irregular, even to the extent ofcompletely filling any voids between the four electrical contacts 901 ascontinuous portions of the electrolyte bridging adjacent ones of thefour electrical contacts 901. For example, as shown in FIG. 9, thememory cell material 909 between the first electrical contact EC1 andthe fourth electrical contact EC4 meet to form a conductive pathway.

Applying the conductive pathway and power-law permutationalrelationships to the memory cell 900 of FIG. 9, for four electricalcontacts, the maximum number of conductive pathways is either four,five, or six (depending upon whether one or both of the two optionalcross-coupled conductive pathways are used). Based on the number ofconductive pathways chosen, the maximum number of possible permutationsor ways of connecting the four electrical contacts is then 16, 32, or64. These possible combinations and permutations for the memory cell 900of FIG. 9 are summarized in Table VII, below.

TABLE VII Power-Law Increased Permutations of an RCM Cell Number ofElectrical Contacts, N_(EC) 4 Number of Conductive Pathways, N_(CP) 4,5, or 6 Number of Possible Permutations, N_(PERM) 16, 32, or 64

Based on reading and understanding the disclosure provided herein, aperson of ordinary skill in the art may readily extend the techniquesand concepts to any number of contacts and various arrangements ofmemory cells. For example, the person of ordinary skill in the art canapply the techniques and concepts to a memory cell with hundreds,thousands, or even more electrical contacts in various geometricalarrangements with other memory cells. Thus, many embodiments may berealized.

For example, a system 1000 of FIG. 10 is shown to include a controller1003, an input/output (I/O) device 1011 (e.g., a keypad, a touchscreen,or a display), a memory device 1009, a wireless interface 1007, a staticrandom access memory (SRAM) device 1001, and a shift register (e.g., amonolithic shift register formed using the techniques disclosed herein)coupled to each other via a bus 1013. A battery 1005 may supply power tothe system 1000 in one embodiment. The memory device 1009 may include aNAND memory, a flash memory, a NOR memory, a combination of these, orthe like.

The controller 1003 may include, for example, one or moremicroprocessors, digital signal processors, micro-controllers, or thelike. The memory device 1009 may be used to store informationtransmitted to or by the system 1000. The memory device 1009 mayoptionally also be used to store information in the form of instructionsthat are executed by the controller 1003 during operation of the system1000 and may be used to store information in the form of user dataeither generated, collected, or received by the system 1000 (such asimage data). The instructions may be stored as digital information andthe user data, as disclosed herein, may be stored in one section of thememory as digital information and in another section as analoginformation. As another example, a given section at one time may belabeled to store digital information and then later may be reallocatedand reconfigured to store analog information. The controller 1003, thememory device 1009, and and/or the shift register 1015 may include oneor more of the novel memory devices described herein.

The I/O device 1011 may be used to generate information. The system 1000may use the wireless interface 1007 to transmit and receive informationto and from a wireless communication network with a radio frequency (RF)signal. Examples of the wireless interface 1007 may include an antenna,or a wireless transceiver, such as a dipole antenna. However, the scopeof the inventive subject matter is not limited in this respect. Also,the I/O device 1011 may deliver a signal reflecting what is stored aseither a digital output (if digital information was stored), or as ananalog output (if analog information was stored). While an example in awireless application is provided above, embodiments of the inventivesubject matter disclosed herein may also be used in non-wirelessapplications as well. The I/O device 1011 may include one or more of thenovel memory devices described herein.

The various illustrations of the methods and apparatuses are intended toprovide a general understanding of the structure of various embodimentsand are not intended to provide a complete description of all theelements and features of the apparatuses and methods that might make useof the structures, features, and materials described herein.

The apparatuses of the various embodiments may include or be includedin, for example, electronic circuitry used in high-speed computers,communication and signal processing circuitry, single or multi-processormodules, single or multiple embedded processors, multi-core processors,data switches, and application-specific modules including multilayer,multi-chip modules, or the like. Such apparatuses may further beincluded as sub-components within a variety of electronic systems, suchas televisions, cellular telephones, personal computers (e.g., laptopcomputers, desktop computers, handheld computers, tablet computers,etc.), workstations, radios, video players, audio players, vehicles,medical devices (e.g., heart monitors, blood pressure monitors, etc.),set top boxes, and various other electronic systems.

A person of ordinary skill in the art will appreciate that, for this andother methods (e.g., programming or read operations) disclosed herein,the activities forming part of various methods may be implemented in adiffering order, as well as repeated, executed simultaneously, withvarious elements substituted one for another. Further, the outlined actsand operations are only provided as examples, and some of the acts andoperations may be optional, combined into fewer acts and operations, orexpanded into additional acts and operations without detracting from theessence of the disclosed embodiments.

The present disclosure is therefore not to be limited in terms of theparticular embodiments described in this application, which are intendedas illustrations of various aspects. Many modifications and variationscan be made, as will be apparent to a person of ordinary skill in theart upon reading and understanding the disclosure. Functionallyequivalent methods and apparatuses within the scope of the disclosure,in addition to those enumerated herein, will be apparent to a person ofordinary skill in the art from the foregoing descriptions. Portions andfeatures of some embodiments may be included in, or substituted for,those of others. Many other embodiments will be apparent to those ofordinary skill in the art upon reading and understanding the descriptionprovided herein. Such modifications and variations are intended to fallwithin a scope of the appended claims. The present disclosure is to belimited only by the terms of the appended claims, along with the fullscope of equivalents to which such claims are entitled. It is also to beunderstood that the terminology used herein is for the purpose ofdescribing particular embodiments only and is not intended to belimiting.

In various embodiments, an apparatus comprising at least two resistancechange memory (RCM) cells is provided. The apparatus includes at leasttwo electrical contacts coupled to each of the RCM cells. A memory cellmaterial is disposed between pairs of each of the electrical contactscoupled to each of the RCM cells. The electrolyte is capable of forminga localized conductive pathway between the electrical contacts with atleast a portion of the electrolyte arranged to cross-couple a conductivepathway between select ones of the at least two electrical contactselectrically coupled to each of the at least two RCM cells.

In at least some of the embodiments of the apparatus, pairs of each ofthe electrical contacts are configured to be accessed individually forprogram, erase, or read operations. In at least some of the embodimentsof the apparatus, a number of conductive pathways to be formed betweenpairs of the electrical contacts increase linearly based on a totalnumber of the electrical contacts. In at least some of the embodimentsof the apparatus, a number of permutations for programming, erase, orread operations increases according to a power-law relationship based onthe number of conductive pathways.

In various embodiments, an apparatus is provided that includes at leastone resistance change memory (RCM) cell. The apparatus includes three ormore electrical contacts electrically coupled to the RCM cell with thethree or more electrical contacts arranged laterally to one another. Amemory cell material is disposed between pairs of the electricalcontacts. The electrolyte is capable of forming a localized conductivepathway between pairs of the three or more electrical contacts.

In some embodiments of the apparatus, at least a portion of theelectrolyte is arranged to cross-couple a conductive pathway betweenselected ones of the electrical contacts.

In various embodiments, an apparatus is provided that includes anelectrical device with at least three electrical contacts coupled to theelectrical device. The three contacts are arranged laterally to oneanother. A memory cell material is disposed between at least pairs ofthe at least three electrical contacts.

In some embodiments of the apparatus, the electrical device comprises amonolithic solid-state shift register.

In various embodiments, a method of operating a memory device isprovided. The method includes, in a memory device having at least threeelectrical contacts, selecting a sequence in which to perform aplurality of operations on the memory device, selecting a first pair ofthe at least three electrical contacts to perform a first operation onthe memory device, and selecting a subsequent pair of cross-coupled onesof the at least three electrical contacts to perform a subsequentoperation on the memory device

In various embodiments, an apparatus is provided that includes at leastthree resistance change memory (RCM) cells. The apparatus includes atleast one electrical contact electrically coupled to each of the RCMcells where the RCM cells are arranged laterally to one another. Amemory cell material is disposed between at least pairs of theelectrical contacts coupled to each of the at least three RCM cells. Theelectrolyte is capable of forming a conductive pathway between theelectrical contacts.

In some embodiments of the apparatus, seven RCM cells are formed in ahexagonal close-packed array. In some embodiments of the apparatus, fourRCM cells are formed in a square array.

As used herein, the term “or” may be construed in an inclusive orexclusive sense. Additionally, although various exemplary embodimentsdiscussed below may primarily involve two-state (e.g., single-levelcells (SLC)) memory devices, the embodiments are merely given forclarity of disclosure, and thus, are not limited to apparatuses in theform SLC memory devices or even to memory devices in general. Forexample, the disclosure provided can be readily applied to other typesof electrical devices such as monolithic solid-state shift registersbased on the filamentary or conductive pathways.

The Abstract of the Disclosure is provided to comply with 37 C.F.R.§1.72(b), requiring an abstract allowing the reader to quickly ascertainthe nature of the technical disclosure. The abstract is submitted withthe understanding that it will not be used to interpret or limit theclaims. In addition, in the foregoing Detailed Description, it may beseen that various features are grouped together in a single embodimentfor the purpose of streamlining the disclosure. This method ofdisclosure is not to be interpreted as limiting the claims. Thus, thefollowing claims are hereby incorporated into the Detailed Description,with each claim standing on its own as a separate embodiment.

What is claimed is:
 1. An apparatus comprising: at least two resistancechange memory (RCM) cells; at least two electrical contacts electricallycoupled to each of the at least two RCM cells; and a memory cellmaterial disposed between pairs of the at least two electrical contactscoupled to each of the at least two RCM cells, the memory cell materialcapable of forming a conductive pathway between the at least twoelectrical contacts, at least a portion of the memory cell materialarranged to cross-couple a conductive pathway between select ones of theat least two electrical contacts electrically coupled to each of the atleast two RCM cells.
 2. The apparatus of claim 1, wherein the at leasttwo RCM cells share a continuous memory cell material.
 3. The apparatusof claim 1, wherein the pairs of each of the at least two electricalcontacts electrically coupled to each of the at least two RCM cells areconfigured to be accessed individually for program, erase, or readoperations.
 4. The apparatus of claim 1, wherein a number of conductivepathways to be formed between the pairs of the at least two electricalcontacts electrically coupled to each of the at least two RCM cellsincrease approximately linearly based on a total number of theelectrical contacts.
 5. The apparatus of claim 4, wherein a number ofpermutations for programming, erase, or read operations is to increaseapproximately according to a power-law relationship based on the numberof conductive pathways.
 6. The apparatus of claim 1, wherein the RCMcells comprise conductive-bridging random access memory (CBRAM) cells.7. The apparatus of claim 1, wherein the RCM cells comprise resistiverandom access memory (RRAM) cells.
 8. The apparatus of claim 1, whereinat least some of the RCM cells comprise a single-level cell memorydevice.
 9. The apparatus of claim 1, wherein at least some of the RCMcells comprise a multi-level cell memory device.
 10. The apparatus ofclaim 1, wherein the memory cell material comprises a chalcogenidematerial.
 11. The apparatus of claim 1, wherein at least one of theelectrical contacts is an anode comprising an oxidizable metallicmaterial.
 12. The apparatus of claim 1, wherein at least one of theelectrical contacts is a cathode comprising an inert material.